Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2004-03-25
2008-08-05
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S431000
Reexamination Certificate
active
07408238
ABSTRACT:
A photodiode array1is provided with an n-type silicon substrate3. A plurality of photodiodes4are formed in array on the opposite surface side to an incidence surface of light L to be detected, in the n-type silicon substrate3. Spacers6having a predetermined height are provided in a region not corresponding to regions where the photodiodes4are formed, on the incidence surface side of the light L to be detected, in the n-type silicon substrate3.
REFERENCES:
patent: 1 548 836 (2005-06-01), None
patent: 57-42175 (1982-03-01), None
patent: 57042175 (1982-09-01), None
patent: 05-121711 (1993-05-01), None
patent: 07-333348 (1995-12-01), None
patent: 09-181243 (1997-07-01), None
patent: 10-223873 (1998-08-01), None
patent: 11-297975 (1999-10-01), None
patent: 2003-086826 (2003-03-01), None
patent: 2003-086827 (2003-03-01), None
Drinker Biddle & Reath LLP
Hamamatsu Photonics K.K.
Pham Long
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