Photodiode array and optical receiver device including the same

Details Photodiode array and optical receiver device including the same Photodiode array and optical receiver device including the same

2005-09-27

2005-09-27

Schillinger, Laura M (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S098000, C257S347000

Reexamination Certificate

active

06949770

ABSTRACT:
Disclosed is a photodiode array which includes a plurality of p-i-n photodiodes arrayed on a semi-insulative semiconductor substrate, each photodiode including an n-type semiconductor layer grown on the substrate, an i-type semiconductor layer grown on the n-type semiconductor layer, a p-type semiconductor layer grown on the i-type semiconductor layer, an n-type electrode provided on the n-type semiconductor layer in a region exposed by partially removing the p-type semiconductor layer and the i-type semiconductor layer, and a p-type electrode provided on the p-type semiconductor layer. A trench is provided between the two adjacent photodiodes by partially removing the p-type semiconductor layer, the i-type semiconductor layer, and the n-type semiconductor layer. Consequently, the size and pitch of the photodiodes can be decreased and crosstalk between the photodiodes can be reduced. Also disclosed is an optical receiver device including the photodiode array.

REFERENCES:
patent: 6448614 (2002-09-01), Kubo et al.
patent: 2003/0160248 (2003-08-01), Yamaguchi et al.
patent: 01206672 (1989-08-01), None
patent: 01206672 (1989-08-01), None
patent: 2001-144278 (2001-05-01), None
patent: 2001144278 (2001-05-01), None
patent: 2001352094 (2001-12-01), None

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