Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-02-08
2005-02-08
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S443000, C257S447000, C257S461000, C257S464000, C250S370140
Reexamination Certificate
active
06853046
ABSTRACT:
A photodiode array comprises a semiconductor substrate formed with an array of a plurality of pn junction type photodiodes on a light incident surface side, the surface opposite from the incident surface in the semiconductor substrate being made of a (100) plane; a through hole, formed in an area held between the photodiodes, penetrating through the semiconductor substrate from the incident surface side to the opposite surface side; and a conductive layer extending from the incident surface to the opposite surface by way of a wall surface of the through hole; the through hole being formed by connecting a vertical hole part formed substantially perpendicular to the incident surface on the incident surface side, and a pyramidal hole part formed like a quadrangular pyramid on the opposite surface side to each other within the semiconductor substrate; the pyramidal hole part having a wall surface formed as a (111) plane.
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Gebremariam Samuel A
Hamamatsu Photonics K.K.
Lee Eddie
Morgan & Lewis & Bockius, LLP
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