Photodiode array and method for manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

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Details

257328, 257350, H01L 2976, H01L 2714, H01L 2701

Patent

active

056335261

ABSTRACT:
A photodiode array includes an insulating film; a semiconductor layer of a first conductivity type provided on the insulating film; a positive electrode and negative electrode formed on the semiconductor layer; and a plurality of pn junctions formed in series in the semiconductor layer between the positive and negative electrodes. The pn junctions are formed by a diffusion layer of a second conductivity type formed in the semiconductor layer and another diffusion layer of the first conductivity type formed in the diffusion layer, so as to terminate on the insulating film.

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patent: 5523610 (1996-06-01), Kudo et al.

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