Photodiode array and method for manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

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257448, 257457, 257459, 257465, 257347, 257654, 257928, 437141, 437149, 437180, 437205, 437916, H01L 3100, H01L 2122

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active

055236103

ABSTRACT:
A photodiode array is provided which includes a cell comprised of at least a substrate, an insulating film formed on the substrate, a semiconductor layer containing an impurity of first conductivity type and provided on the insulating film, an impurity-diffusion layer of second conductivity type formed in the semiconductor layer and reaching the insulating film, and at least one impurity-diffusion layer of the first conductivity type formed within the impurity-diffusion layer of the second conductivity type and reaching the insulating film, wherein pn junctions are defined between the layers of opposite conductivity types and arranged laterally, and of the pn junctions, any pn junction of a predetermined order are connected to each other in series. By virtue of this arrangement, the area of pn junctions per unit area of a substrate is increased thereby contributing to a reduction in chip size and in production cost.

REFERENCES:
patent: 3690953 (1972-09-01), Wise
patent: 3745424 (1973-07-01), Ohuchi et al.
patent: 3988774 (1976-10-01), Cohen-Solal et al.
patent: 3994012 (1976-11-01), Warner, Jr.
U.S. application Ser. No. 07/992,115.

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