Photodiode array

Details Photodiode array Photodiode array

2011-08-30

2011-08-30

Sandvik, Benjamin P (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257SE31116

Reexamination Certificate

active

08008741

ABSTRACT:
A photodiode array1has a plurality of photodetector channels10which are formed on an n-type substrate2having an n-type semiconductor layer12, with a light to be detected being incident to the plurality of photodetector channels10. The photodiode array1comprises: a p−-type semiconductor layer13formed on the n-type semiconductor layer12of the substrate2; resistors4each of which is provided to each of the photodetector channels10and is connected to a signal conductor3at one end thereof; and an n-type separating part20formed between the plurality of photodetector channels10. The p−-type semiconductor layer13forms a pn junction at the interface between the substrate2, and comprises a plurality of multiplication regions AM for avalanche multiplication of carriers produced by the incidence of the light to be detected so that each of the multiplication regions corresponds to each of the photodetector channels. The separating part20is formed so that each of the multiplication regions AM of the p−-type semiconductor layer13corresponds to each of the photodetector channels10.

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