Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1998-09-03
2000-03-28
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257233, 257462, 438 48, H01L 3106, H01L 27148, H01L 29768
Patent
active
06043550&
ABSTRACT:
A photodiode which senses only .lambda.2 without WDM in optical communication systems containing two signals of different wavelengths .lambda.1 and .lambda.2. The photodiode has a filter layer whose band gap wavelength .lambda.g satisfies an inequality of .lambda.1<.lambda.g<.lambda.2 for annihilating .lambda.1. For vanishing tails of signals, the peripheral pn-junction is formed around the central pn-junction. In the case, an n-electrode is mounted on both the peripheral p-region and the peripheral n-region.
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Kuhara Yoshiki
Nakanishi Hiromi
Terauchi Hitoshi
Saadat Mahshid
Sumitomo Electric Industries Ltd.
Wilson Allan R.
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