Photodiode and photodiode array on a II-VI material and processe

Details Photodiode and photodiode array on a II-VI material and processe Photodiode and photodiode array on a II-VI material and processe

1989-06-07

1990-11-20

James, Andrew J.

357 32, 357 20, 357 61, H01L 2714, H01L 3100

Patent

active

049722441

ABSTRACT:
Photodiode and array of photodiodes on II-VI material and their production processes. The photodiodes (48) are formed in a type P, Hg.sub.1-x Cd.sub.x Te semiconductor layer (13) with 0.ltoreq.x.ltoreq.1 deposited directly on a CdTe insulating substrate (11), having an active zone (37) of type N, a first electrical contact (47) on the semiconductor layer, a second electrical contact (45) on the active zone, and insulant (21) separating the first and second electrical contacts and an insulation or isolation trench (15), whose depth exceeds the thickness of the active zone and surrounding the latter, the first electrical contact (47) being located in the bottom (27) of the trench.

REFERENCES:
patent: 3878553 (1975-02-01), Sirles et al.
patent: 4206003 (1980-06-01), Koehler
patent: 4290844 (1981-09-01), Rotolante et al.
patent: 4494133 (1985-01-01), Dean et al.
patent: 4524378 (1985-06-01), Cockrum et al.
patent: 4639756 (1987-01-01), Rosebeck et al.
patent: 4646120 (1987-02-01), Hacskaylo
patent: 4695861 (1987-09-01), Paine et al.

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