Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2011-08-30
2011-08-30
Nguyen, Ha Tran T (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C438S091000
Reexamination Certificate
active
08008688
ABSTRACT:
The present invention provides a highly reliable photodiode, as well as a simple method of fabricating such a photodiode. During fabrication of the photodiode, a grading layer is epitaxially grown on a top surface of an absorption layer, and a blocking layer, for inhibiting current flow, is epitaxially grown on a top surface of the grading layer. The blocking layer is then etched to expose a window region of the top surface of the grading layer. Thus, the etched blocking layer defines an active region of the absorption layer. A window layer is epitaxially regrown on a top surface of the blocking layer and on the window region of the top surface of the grading layer, and is then etched to form a window mesa.
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Campbell Shaun
JDS Uniphase Corporation
Nguyen Ha Tran T
Pequignot Matthew A.
Pequignot & Myers LLC
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