Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-12-05
2010-02-09
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23017, C257SE23019
Reexamination Certificate
active
07659627
ABSTRACT:
A photodiode balanced in increased sensitivity and speed. The photodiode includes a semiconductor substrate, an active region formed on the semiconductor substrate, and a comb electrode connected to the active region. The comb electrode includes a plurality of electrode fingers, and each of the electrode fingers includes a transparent electrode contacting the active region, and an opaque electrode formed on the transparent electrode. Here, the width of the opaque electrode is set smaller than the width of the transparent electrode.
REFERENCES:
patent: 5777390 (1998-07-01), Berger et al.
patent: 7557436 (2009-07-01), Mizuno et al.
patent: 2003/0133066 (2003-07-01), Ono et al.
patent: 2006/0103750 (2006-05-01), Iwamoto
patent: 2006/0274250 (2006-12-01), Ono et al.
Giziewicz Wojciech P.
Kimerling Lionel C.
Michel Jurgen
Miyachi Yukiya
FUJIFILM Corporation
Massachusetts Instutite of Technology
Sughrue & Mion, PLLC
Wilson Allan R.
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