Photodiode

Details Photodiode Photodiode

2006-06-30

2009-06-09

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S201000, C257S222000, C257S434000, C257S461000, C257SE31058

Reexamination Certificate

active

07544975

ABSTRACT:
A forward light monitoring photodiode having a high reflection film with low dark current for detecting forward light emitted from a laser diode and power of the laser diode in spite of the change of temperatures or yearly degradation. The high reflection film is made by depositing an SiON layer upon an InP window layer or an InP substrate by a plasma CVD method. Al2O3/Si reciprocal layers or Al2O3/TiO2reciprocal layers are produced upon the SiON layer. The high reflection film reflects 80%-90% of a 45 degree inclination incidence beam and allows 20%-10% of the incidence beam to pass the film and arrive at the InP window or substrate.

REFERENCES:
patent: 7282428 (2007-10-01), Inada
patent: 04242701 (1992-08-01), None
patent: 05-342617 (1993-12-01), None
patent: 08-116127 (1996-05-01), None
patent: 2003332674 (2003-11-01), None

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