Photodiode

Details Photodiode Photodiode

2008-03-11

2008-03-11

Lee, Calvin (Department: 2818)

Semiconductor device manufacturing: process

Avalanche diode manufacture

C257S199000, C257S186000

Reexamination Certificate

active

10556460

ABSTRACT:
The invention provides a method of manufacturing an avalanche diode comprising the steps of applying a mask (6) over an active diode region (5) in a wafer (1), and damaging the region the surrounding the active diode region by breaking bonds in the semiconductor lattice to provide gettering sites in this surrounding region.

REFERENCES:
patent: 6995444 (2006-02-01), Cova et al.
patent: 2003/0057522 (2003-03-01), Francis et al.
patent: 0076143 (1983-04-01), None
patent: WO03/003476 (2003-01-01), None
Patent Abstracts of Japan, vol. 0102, No. 75, Sep. 18, 1986 & JP 61 096740 A (Matsushita Electronics Corp).
W.J. Kindt, Theory of Geiger Mode Avalanche Photodiode Arrays, Chapter 4 Design and fabrication, 9 pgs., 1999.

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