Photodetectors using III-V nitrides

Details Photodetectors using III-V nitrides Photodetectors using III-V nitrides

1995-07-07

1997-10-14

Tokar, Micheal J.

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

25037001, 25037002, 250371, 250372, H01L 2120, H01L 2126

Patent

active

056775385

ABSTRACT:
A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector.

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