Photodetector with surrounding region

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257461, 257465, 257184, 257914, 257459, H01L 2714

Patent

active

053329198

ABSTRACT:
This invention relates to a photodetector including a package having a window disposed in a light incident part, and a light detecting element installed in the package. The light detecting element includes a first region formed of a second conduction-type semiconductor and embedded in a first conduction-type semiconductor layer; a second region formed of second conduction-type semiconductor and embedded so as to be spaced from and to surround the first region; and a conductor layer provided both on at least one part of top surface of the first conduction-type semiconductor layer and on at least one part of top surface of the second region. The first region is surrounded by a second conduction-type second region. On the surface of the semiconductor crystal layer, an electrode is formed on the first region, and a reflection preventing layer is formed on that part of the first region inside the electrode, and a device protecting film is formed on that part of the first region outside the electrode. On the semiconductor crystal layer, a metal film is formed in contact both with the semiconductor crystal layer and with a second region. This structure enables the second region to capture unnecessary charges and further to recombine and extinguish them.

REFERENCES:
patent: 3703669 (1972-11-01), London
patent: 4011016 (1977-03-01), Layne et al.
patent: 4323719 (1982-04-01), Green
patent: 4330680 (1982-05-01), Goetzberger
patent: 5177581 (1993-01-01), Kubo et al.
patent: 5233209 (1993-08-01), Rodgers et al.
Forbes, "Photodiode Having Ion Implant for Improved Light Sensitivity," IBM Technical Disclosure Bulletin, vol. 15, No. 4, Sep. 1972, p. 1348.
Patent Abstract of Japan, vol. 11, No. 152 (E-507) 16 May 1987.
Schlafer et al, "A Hermetic Fiber-Coupled P-I-N Photodetector Package for use in Fiber-Optic Preamplifier Circuits", Journal of Lightwave Technology, vol. Lt3, No. 6, New York, pp. 1321-1323 (Dec. 1985).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Photodetector with surrounding region does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photodetector with surrounding region, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photodetector with surrounding region will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1054649

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.