Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1993-02-22
1994-07-26
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257461, 257465, 257184, 257914, 257459, H01L 2714
Patent
active
053329198
ABSTRACT:
This invention relates to a photodetector including a package having a window disposed in a light incident part, and a light detecting element installed in the package. The light detecting element includes a first region formed of a second conduction-type semiconductor and embedded in a first conduction-type semiconductor layer; a second region formed of second conduction-type semiconductor and embedded so as to be spaced from and to surround the first region; and a conductor layer provided both on at least one part of top surface of the first conduction-type semiconductor layer and on at least one part of top surface of the second region. The first region is surrounded by a second conduction-type second region. On the surface of the semiconductor crystal layer, an electrode is formed on the first region, and a reflection preventing layer is formed on that part of the first region inside the electrode, and a device protecting film is formed on that part of the first region outside the electrode. On the semiconductor crystal layer, a metal film is formed in contact both with the semiconductor crystal layer and with a second region. This structure enables the second region to capture unnecessary charges and further to recombine and extinguish them.
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Patent Abstract of Japan, vol. 11, No. 152 (E-507) 16 May 1987.
Schlafer et al, "A Hermetic Fiber-Coupled P-I-N Photodetector Package for use in Fiber-Optic Preamplifier Circuits", Journal of Lightwave Technology, vol. Lt3, No. 6, New York, pp. 1321-1323 (Dec. 1985).
Mintel William
Sumitomo Electric Industries Ltd.
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