Photodetector with high dynamic range and increased...

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

Reexamination Certificate

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C250S208100

Reexamination Certificate

active

06921891

ABSTRACT:
A photodiode (1) in a conventional photodetector-pixel architecture is supplied with a shunt diode (2) connected to a control voltage (V0). Suitable selection of the constant or time-varying control voltage (Vc) allows a combination of linear and non-linear, preferably logarithmic illumination response of the photodiode (1), resulting in a high dynamic photodetecting range of more than five orders of magnitude. The properties of the shunt diode (2) and the control voltage (Vc) can be chosen such that the resulting dark current matches the dark current of the photodiode (1), which becomes independent of voltage for high temperatures. This enables photodetecting with a sufficient dynamic range at higher temperatures than possible with conventional photodetectors.

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patent: 5721422 (1998-02-01), Bird
patent: 5854498 (1998-12-01), Merrill
patent: 1 003 329 (2000-05-01), None
Patent Abstracts of Japan, Solid-State Image Pickup Device, Publication Date: Aug. 20, 1986.
Elektronisch sehen, Alternative zur CCD-STruktur bewaltigt hohe Helligkeitadynamik, Bauelemente, CMOS-Bildsensor, Elektronik Mar. 1995, pp. 52-57.
Wide-Dynmic-Range Pixel with Combined Linear and Logarithmic Response and Increased Signal Swing, Sensors and Camera Systems for Scientific, SPIE vol. 3965, pp. 4-10.
WO 01/47021 A1, Method and Apparatus for Achieving Uniform Low Dark Current with CMOS Photodiodes, Publication Date: Jun 28, 2001.

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