Photodetector with graded bandgap region

Details Photodetector with graded bandgap region Photodetector with graded bandgap region

1982-08-30

1986-07-08

James, Andrew J.

357 16, 357 90, H01L 2714

Patent

active

045996326

ABSTRACT:
A photodetector having a graded bandgap region is an ultrahigh speed photodetector when operated at zero bias.

REFERENCES:
patent: 4203124 (1980-05-01), Gordon et al.
patent: 4254429 (1981-03-01), Yamazaki
patent: 4383269 (1983-05-01), Capasso
G. F. Williams et al, "The Graded Bandgap Multilayer Avalanche Photodiode: A New Low-Noise Detector," IEEE Electron Device Letters, vol. EDL-3, No. 3, Mar. 1982, pp. 71-73.
D. H. Auston et al, "Picosecond Optoelectronic Detection, Sampling, and Correlation Measurements in Amorphous Semiconductors," Applied Physics Letters, vol. 37, No. 4, Aug. 15, 1980, pp. 371-373.
J. M. Woodall et al, "An Isothermal Etchback-Regrowth Method for High-Efficiency Ga.sub.1-x Al.sub.x As-GaAs Solar Cells," Applied Physics Letters, vol. 30, No. 9, May 1, 1977, pp. 492-493.
H. Kroemer, "Quasi-Electric and Quasi-Magnetic Fields in Nonuniform Semiconductors," RCA Review, Sep. 1957, pp. 332-342.

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