Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-02-24
1995-02-14
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257186, 257187, 257436, H01L 3104, H01L 29205
Patent
active
053897978
ABSTRACT:
A photodetector that is responsive to a wavelength or wavelengths of interest which have heretofore been unrealized. The photodetector includes a resonant cavity structure bounded by first and second reflectors, the resonant cavity structure being resonant at the wavelength or wavelengths of interest for containing a plurality of standing waves therein. The photodetector further includes a radiation absorbing region disposed within the resonant cavity structure, the radiation absorbing region including a plurality of radiation absorbing layers spaced apart from one another by a distance substantially equal to a distance between antinodes of adjacent ones of the standing waves. Each of radiation absorbing layers is spatially positioned at a location of one of the antinodes of one of the standing waves such that radiation absorption is enhanced. The radiation absorbing layers may be either bulk layers or quantum wells includes a plurality of layers, each of which is comprised of a strained layer of InGaAs. Individual ones of the InGaAs layers are spaced apart from one another by a GaAs barrier layer.
REFERENCES:
patent: 4943970 (1990-07-01), Bradley
patent: 4949350 (1990-08-01), Jewell et al.
patent: 5229627 (1993-07-01), Kosaka
M. S. Unlu et al., "Resonant Cavity Enhanced AlGaAs/GaAs Heterojunction Phototransistors with an Intermediate InGaAs Layer in the Collector," Appl. Phys. Lett., vol. 57, No. 8, Aug. 20, 1990, pp. 750-752.
M. Y. A. Raja et al., "Surface-Emitting, Multiple Quantum Well GaAs/AlGaAs Laser with Wavelength-Resonant Periodic Gain Medium," Appl. Phys. Lett., vol. 53, No. 18, Oct. 31, 1988, pp. 1679-1680.
Brennan Thomas M.
Bryan Robert P.
Olbright Gregory R.
Tsao Jeffrey Y.
Chafin James H.
Jackson Jerome
Moser William R.
Ojanen Karuna
The United States of America as represented by the Secretary of
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