Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Patent
1997-11-21
1998-07-07
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
257431, 257448, 257461, 257462, H01L 310328
Patent
active
057773521
ABSTRACT:
A photodetector that incorporates at least two photosensitive regions (separated by at least one physical gap) of a first semiconductor type with the at least two photosensitive regions being supported on a substrate and acting as first terminals of the photodetector is improved by; adding a second semiconductor type into the physical gap(s) abutting the at least two photosensitive regions. The second semiconductor region(s) form a barrier to the out diffusion between the at least two photosensitive regions of the first semiconductor type. Additionally, the second semiconductor type region acts as a second photodetector terminal. This improved geometry results in faster rise and fall times of the photodetector's output current by decreasing the 3-D spaces within the gap(s) between the at least two photosensitive regions which were not subjected to the presence of an E-field when unimproved photodetectors were biased into operation.
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Sze Physics of Semiconductor Devices p. 783, 1981.
Crane Sara W.
Dugas Edward
Eastman Kodak Company
Wille Douglas A.
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