Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2006-06-20
2006-06-20
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S059000, C257S072000, C257S088000, C257S232000, C257S291000, C257S292000
Reexamination Certificate
active
07064362
ABSTRACT:
A photodetector formed in monolithic form including a first active area of doped single-crystal silicon corresponding to first and second photodiodes having the same surface area as two charge transfer MOS transistors, and as one storage diode; a second active area of doped single-crystal silicon arranged next to the portion of the first active area associated with the second photodiode and corresponding to a precharge switch; and a third active doped single-crystal silicon area arranged next to the portion of the first active area associated with the first photodiode and corresponding to two read MOS transistors in series, in which the surfaces of the second and third active areas exposed to light are substantially identical.
REFERENCES:
patent: 5163179 (1992-11-01), Pellegrini
patent: 5587596 (1996-12-01), Chi et al.
patent: 5614744 (1997-03-01), Merrill
patent: 6160281 (2000-12-01), Guidash
patent: 6392279 (2002-05-01), Toyofuku
patent: 6423994 (2002-07-01), Guidash
patent: 6512544 (2003-01-01), Merrill et al.
patent: 6563101 (2003-05-01), Tullis
patent: 6741283 (2004-05-01), Merrill et al.
patent: 6743652 (2004-06-01), Thomas et al.
patent: 2003/0127672 (2003-07-01), Rahn et al.
French Search Report from French Patent Application No. 02/11215, filed Sep. 11, 2002.
Patent Abstracts of Japan, vol. 017, No. 646 (E-1467), Nov. 30, 1993 & JP 05 207376 A (Olympus Optical Col. Ltd.).
Jorgenson Lisa K.
Morris James H.
Nadav Ori
STMicroelectronics S.A.
Wolf Greenfield & Sacks P.C.
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