Photodetector matrix with pixels isolated by walls,...

Details Photodetector matrix with pixels isolated by walls,... Photodetector matrix with pixels isolated by walls,...

2005-05-10

2005-05-10

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S444000, C257S222000, C257S088000, C257S293000

Reexamination Certificate

active

06891242

ABSTRACT:
An array of photodetectors intended to be hybridized on a readout circuit and fabricated from a wafer in semiconductor material. The wafer is divided into pixels, the pixels being separated from one another by walls formed crosswise over the entire thickness of the wafer, the hybridization surface having connection pads enabling hybridization of the photodetector array to the readout circuit.

REFERENCES:
patent: 5075238 (1991-12-01), Solomon
patent: 5602414 (1997-02-01), Mitsui et al.
patent: 5729020 (1998-03-01), Matsushita et al.
patent: 6018169 (2000-01-01), Tohyama
patent: 6809008 (2004-10-01), Holm et al.
patent: 63281460 (1988-11-01), None
patent: 2001291892 (2001-10-01), None

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