Photodetector manufacturable by semiconductor processes

Details Photodetector manufacturable by semiconductor processes Photodetector manufacturable by semiconductor processes

2007-08-28

2007-08-28

Epps, Georgia (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Optical or pre-photocell system

C257S294000

Reexamination Certificate

active

10990679

ABSTRACT:
A photodetector includes a semiconductor substrate having photo-cells (1a, 1b, 1c). Each photo-cell is provided with a filter layer20that transmits light in a wavelength range predetermined for the photo-cell, and a photoelectric converter17that generates a signal charge according to an intensity of the light transmitted through the filter layer20. Thickness (ta, tb, tc) of the filter layers20are corresponding to the wavelength ranges predetermined for respective photo-cells. By such a structure, it is possible to provide cost effective photodetectors that can be manufactured without managing materials for pigments and dyestuff for different colors when making color filters.

REFERENCES:
patent: 5182624 (1993-01-01), Tran
patent: 5354989 (1994-10-01), Fenner
patent: 5534443 (1996-07-01), Ohtagaki et al.
patent: 5766980 (1998-06-01), Ohtagaki et al.
patent: 6482669 (2002-11-01), Fan
patent: 5-6986 (1993-01-01), None

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