1984-08-16
1987-01-13
Davie, James W.
357 22, 357 41, 357 55, 357 58, H01L 2714, H01L 3100
Patent
active
046368299
ABSTRACT:
An integrated circuit incorporates a PIN diode connected to the gate of an FET. The semiconductor layers used to construct the diode are also the layers used to construct the FET, and provide a relatively low capacitance per unit area for the diode compared with that of the gate of the FET.
REFERENCES:
patent: 4442445 (1984-04-01), Malik et al.
patent: 4517581 (1985-05-01), Thompson
Greenwood John C.
Thompson George H. B.
Davie James W.
Epps Georgia Y.
IT&T Industries, Inc.
Lenkszus Donald J.
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