Photodetector element containing circuit element and manufacturi

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

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Details

257 81, 257 84, 257444, 257448, H01L 3100, H01L 3112

Patent

active

061277150

ABSTRACT:
Si.sub.3 N.sub.4 having high humidity resistance is used as a surface protecting insulating film covering a metal layer. At a bonding pad portion where metal layer is directly exposed, coverage is provided by anti-corrosion metal portion consisting of a titanium-tungsten alloy layer and gold layers. At a signal processing circuit portion, light intercepting structure and interconnection are provided similarly by titanium-tungsten alloy layer and gold layer. Thus humidity resistance of a photodetector element containing a circuit element is improved, and the gold layer allows direct die-bonding of a laser chip or the like. Further, since light intercepting structure and interconnection can be provided at the signal processing circuit portion simultaneously with the formation of gold layer for the bonding pad portion, the number of manufacturing steps can be reduced.

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