Photodetector comprising a test element group of PN junctions an

Details Photodetector comprising a test element group of PN junctions an Photodetector comprising a test element group of PN junctions an

1993-07-06

1994-12-06

Westin, Edward P.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

324767, H01L 2714, H01L 3118

Patent

active

053713524

ABSTRACT:
A photodetector includes a light responsive element including a semiconductor layer having a plurality of first spaced apart p-n junctions for generating electrical signals in response to incident light, a test element group (TEG) for testing an electrical characteristic of the first p-n junctions, the test element group including a plurality of second spaced apart p-n junctions in the semiconductor layer, and a light shielding mask covering the second spaced apart p-n junctions and preventing incident light from reaching the second spaced apart p-n junctions. The light shielding mask includes at least one window transmitting light, and the window is spaced from each of the second spaced apart p-n junctions. During testing of the electrical characteristics of the photodetector using the TEG, light is not incident directly on the second p-n junctions of the TEG but incident on the semiconductor layer through the window spaced from the second p-n junctions, and the maximum diffusion length of the minority charge carriers in the light responsive element is detected from the result of the test using the TEG. Therefore, the spatial resolution of the photodetector included in a wafer is monitored, and the photodetector is distinguished as defective and nondefective according to the monitored spatial resolution.

REFERENCES:
patent: 5174858 (1992-12-01), Yamamoto et al.

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