Photodetector biasing scheme

Details Photodetector biasing scheme Photodetector biasing scheme

2005-11-29

2005-11-29

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C378S029000

Reexamination Certificate

active

06969896

ABSTRACT:
A photodetector having a semiconductor conversion layer is described. The photodetector is configured to receive x-rays incident on its substrate with the substrate-side contact biased so that the lowest mobility carrier in the semiconductor conversion layer is collected by the substrate side contact.

REFERENCES:
patent: 5051804 (1991-09-01), Morse et al.
patent: 5771271 (1998-06-01), Iodice
patent: 6128362 (2000-10-01), Brauers et al.
patent: 6236050 (2001-05-01), Tumer
patent: 6353229 (2002-03-01), Polischuk et al.
patent: 6480577 (2002-11-01), Izumi et al.
patent: 6795525 (2004-09-01), Kameshima

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