Photodetector based on buried junctions and a corresponding meth

Details Photodetector based on buried junctions and a corresponding meth Photodetector based on buried junctions and a corresponding meth

1997-03-13

1999-03-16

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257464, 257435, H01L 3106

Patent

active

058834214

ABSTRACT:
A photodetector based on buried junctions includes a semiconductor structure with two successive p-n junctions, buried at increasing depths, assembled in pairs in opposition, and defining at least three layers. One of the layers is adjacent to a photosensitive portion of the surface of the photodetector. A reverse bias is applied to the junctions, and the values of at least two internal currents passing through such junctions is detected. The internal currents are generated by received light, with each of the junctions corresponding to a particular wavelength of the received light.

REFERENCES:
patent: 4318115 (1982-03-01), Yoshikawa et al.

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