Photodetector and production method thereof

Details Photodetector and production method thereof Photodetector and production method thereof

2011-01-25

2011-01-25

Chaudhari, Chandra (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257SE31064

Reexamination Certificate

active

07875906

ABSTRACT:
The invention offers a photodetector that has an N-containing InGaAs-based absorption layer having a sensitivity in the near-infrared region and that suppresses the dark current and a production method thereof. The photodetector is provided with an InP substrate1, an N-containing InGaAs-based absorption layer3positioned above the InP substrate1, a window layer5positioned above the N-containing InGaAs-based absorption layer3, and an InGaAs buffer layer4positioned between the N-containing InGaAs-based absorption layer3and the window layer5.

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patent: 2002/0146053 (2002-10-01), Iwai
patent: 2007/0029542 (2007-02-01), Yamada
patent: 2007/0267653 (2007-11-01), Yoneda et al.
patent: 9-219563 (1997-08-01), None
patent: 2001-24282 (2001-01-01), None
patent: 2004-165349 (2004-06-01), None
Wei et al., “Gas Source Molecular Beam Epitaxy Grown InGaAs(P)N-InP Long-Wavelength (λ< 1.65μm) Photodetectors Using a Solid Arsenic Source”IEEE Photonics Technology Letters, vol. 13, No. 4, pp. 352-354 (2001).

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