Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-01-06
1994-06-14
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 23, 257184, 257436, H01L 2714, H01L 3100
Patent
active
053212754
ABSTRACT:
Disclosed is a photodetector adapted to detect light having a predetermined level of photon energy, comprising: a first semiconductor layer, a second semiconductor layer having a quantum well or a quantum wire structure, a barrier layer provided between the first and second semiconductor layers, a device for applying voltage to the barrier layer and the first and second semiconductor layers in order to generate a tunnel current flowing through the barrier layer, and a device for detecting the tunnel current. The second semiconductor layer exhibits a plurality of quantized electron energy levels, the energy difference between which is slightly smaller or slightly larger than the photon energy of the detected light. Further, incidence of the detected light upon the second semiconductor layer causes the quantized electron energy levels to shift by the photo Stark effect, resulting in variation of the tunnel current.
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Database WPIL, No. 89-356302, dated May 11, 1989 re published Appln. Ser. No. 07/271,546.
Fujii Kazuhito
Shimizu Akira
Canon Kabushiki Kaisha
Crane Sara W.
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