Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1995-06-07
2000-07-11
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
275462, 275469, 275464, 257184, H01L 2714
Patent
active
060877030
ABSTRACT:
A photodetector device for converting incident light to an electrical signal has two pn junctions or two MOS junctions fabricated in a silicon substrate. Preferably, a control terminal is provided between the two junctions. A photodetection circuit including a photodetector device has a variable sensitivity and can change the polarity of the output of the photodetector device. For example, the photodetection circuits may have a circuit for providing a bias voltage of one of the two polarities to the photodetector device. The photodetection circuit may have a circuit for changing the polarity of the output signal from the photodetector device.
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"Artificial Retina Devices--Fast Front Ends for Neural Image Processing Systems", by Eberhard Lange et al., 1993 International Joint Conference on Neural Networks.
Funatsu Eiichi
Hara Kunihiko
Miyake Yasunari
Nitta Yoshikazu
Ohta Jun
Abraham Fetsum
Mitsubishi Denki & Kabushiki Kaisha
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