Photodetector and method for fabricating same

Details Photodetector and method for fabricating same Photodetector and method for fabricating same

1997-07-29

1999-08-24

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257461, 257463, H01L 3100

Patent

active

059427892

ABSTRACT:
A photodetector provides high photo-sensitivity, a low resistance of a cathode circuit and quick photoresponse, and includes a light absorption layer in a cavity, which is formed in a N-Si epitaxial layer and surrounded by a side wall oxide layer. A N-Si diffusion layer is formed on the bottom and the side wall around the cavity and has a lower resistance than the epitaxial layer. The diffusion layer contacts a cathode take-out region so that the resistance of the cathode circuit is decreased.

REFERENCES:
patent: 5130776 (1992-07-01), Popovic et al.
patent: 5187554 (1993-02-01), Miwa
patent: 5466962 (1995-11-01), Yamamoto et al.
patent: 5600173 (1997-02-01), Suzunaga
By M. Sugiyama et al., "A selective epitaxial SiGe/Si planar photodetector for Si-based OEICs", 1995 IEEE, IEOM pp. 583-586.

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