Photodetector and amplifier integration

Details Photodetector and amplifier integration Photodetector and amplifier integration

1987-06-10

1988-05-17

Clawson, Jr., Joseph E.

357 16, 357 30, 357 56, 357 58, 357 69, H01L 2980

Patent

active

047454466

ABSTRACT:
Various integrated device structures are described which incorporate novel substrate materials and channel confinement schemes. For example, devices are described for p-type substrates and novel buffer layers. Such substrates are easier to grow and provide good isolation and low-trap density at the interface between substrate and buffer layer.

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