Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Patent
1994-09-01
1996-12-03
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
257 82, 257 84, 257440, 257443, 257233, 257432, 2502061, 2502081, 2503701, 25055938, H01L 2715, H01L 3112, H01L 3300
Patent
active
055810942
ABSTRACT:
A photodetector has a semiconductor substrate which produces light-induced charge upon the absorption of incident light. A first electrode and a second electrode are attached to the surface of the semiconductor substrate so as to form metal-semiconductor junctions. When control voltage V.sub.B, which is variable in a positive range through a negative range, is applied to the first electrode, a photocurrent flows through the second electrode and depletion layers are formed in the surface of the semiconductor substrate. The control voltage V.sub.B applied to the first electrode increases the expanse of one of the depletion layers relative to that of the other to cause the light-induced charge to drift toward one of the depletion layers or the other. Consequently, a positive or negative current is delivered through the second electrode. Thus, the photosensitivity of the photodetector can be controlled by the control voltage V.sub.B.
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Funatsu Eiichi
Hara Kunihiko
Kyuma Kazuo
Nitta Yoshikazu
Oita Masaya
Mintel William
Mitsubishi Denki & Kabushiki Kaisha
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