Photodetector

Details Photodetector Photodetector

2006-03-21

2006-03-21

Pyo, Kevin (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C257S184000, C257S622000

Reexamination Certificate

active

07015453

ABSTRACT:
Quantum wire is formed on the bottom of a V-shaped groove in a V-grooved substrate as a channel between source and drain electrodes or as at least part of the channel. A photocarrier accumulation region is provided within the quantum wire or at a position connected to or adjacent to the quantum wire for accumulating charges generated when light shines onto a photosensitive region that comprises at least a clad layer that covers the quantum wire. A recess is provided in the upper clad layer to localize the photocarrier accumulation region. As a result, it is possible to provide a photodetector that exhibits high sensitivity, high speed and low power consumption in an expanded wavelength region. It is also possible to provide a photodetector capable of constructing core portions thereof by one-time selective growth.

REFERENCES:
patent: 4989052 (1991-01-01), Okada et al.
patent: 6753593 (2004-06-01), Jefferson et al.
patent: 2004/0061103 (2004-04-01), Kendall
patent: 9-260711 (1997-10-01), None
A. J. Shields, et al., “Detection of single photons using a field-effect transistor gated by a layer of quantum dots”, Applied Physics Letters, vol. 76, No. 25, Jun. 19, 2000.
Masashi Shima, et al., “Random telegraph signals of tetrahedral-shaped recess field-effect transistor memory cell with a hole-trapping floating quantum dot gate”, Applied Physics Letters, vol. 77, No. 3, Jul. 17, 2000.
Akira Fujiwara, et al., “Detection of single charges and their generation-recombination dynamics in Si nanowires at room temperature”, Applied Physics Letters, vol. 80, No. 24, Jun. 17, 2002.

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