Photodetector

Details Photodetector Photodetector

1997-11-06

1999-11-30

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

257431, 257432, 257448, 257466, H01L 310328

Patent

active

059947241

ABSTRACT:
A photodetector design is disclosed for preventing an electrode from being broken. A recess portion is formed in a semiconductor substrate. A light absorbing layer is formed in the recess portion, and a buffer layer is formed on the light absorbing layer. A contact layer is formed on the buffer layer. The height of the light absorbing layer can be set to minimize the effect of a step caused by facet formation. An insulating layer is formed outside of a recess portion to project from a main surface of the substrate. The anode electrode is formed on the insulating layer and substantially outside of the recess and, as a result, the electrode is less likely to be broken.

REFERENCES:
patent: 4507674 (1985-03-01), Gaalema
patent: 4847210 (1989-07-01), Hwang et al.
patent: 5576221 (1996-11-01), Takemura et al.
patent: 5726440 (1998-03-01), Kalkhoran et al.
M. Sugiyama, et al., "A selective epitaxial SiGe/Si planar photodetector for Si-based OEICs", IEEE, pp. 583-586, 1995.

Affiliated with

Also associated with

Rating

Photodetector does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photodetector, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photodetector will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1675830