Photodetector

Details Photodetector Photodetector

1984-08-17

1986-11-25

Davie, James W.

357 16, 357 56, H01L 2714, H01L 3100

Patent

active

046252266

ABSTRACT:
A structure of photodetector in which the active region is formed by creating a p-n junction (6) extending in a layer (3) of material of small band gap (InGaAs) in such a way that it emerges in material (InP) of a larger band gap (2) at the surface of the semiconductive body.

REFERENCES:
patent: 4442444 (1984-04-01), Osaka

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