Photodetector

Details Photodetector Photodetector

2006-02-28

2006-02-28

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S009000, C257S431000, C257S442000, C257S458000, C257S461000

Reexamination Certificate

active

07005687

ABSTRACT:
The present invention provides the photodetector comprising a lower cladding layer including a n-type doped region, an absorbing layer, an upper cladding layer including a p-type doped region, and ohmic electrodes connected to said lower cladding layer and said upper cladding layer, wherein said p-type doped region extends to be formed into said absorbing layer by a predetermined length.In accordance with present invention, by reducing effect of the hetero junction barrier where holes move in the intrinsic region, the operating voltage can be decreased and the bandwidth can be improved.

REFERENCES:
patent: 6278820 (2001-08-01), Hayes
patent: 6633425 (2003-10-01), Lee
patent: 2004/0126057 (2004-07-01), Yoo
patent: 08-062554 (1996-03-01), None
patent: 2001-0090166 (2001-10-01), None
Andreas Stohr, et al.; “Optical Heterodyne Millimeter-Wave Generation Using 1.55-μm Traveling-Wave Photodetectors”; IEEE Transactions on Microwave Theory and Techniques, vol. 49, No. 10, Oct. 2001.

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