Photodetector

Details Photodetector Photodetector

1986-09-29

1988-08-02

Davie, James W.

357 16, 357 56, 357 61, H01L 2714, H01L 3100

Patent

active

047616806

ABSTRACT:
A photodetector comprising a light absorptive region, a wide bandgap region adjacent to the light absorptive region and a region of a first conductivity type extending through the wide bandgap region into the light absorptive region is improved by the incorporation of a lattice matched, intermediate bandgap region between the wide bandgap region and the light absorptive region. The p-n junction lies in the intermediate bandgap region in proximity to the interface thereof with the light absorptive region. The quantum efficiency of the disclosed device is significantly improved over prior art devices.

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patent: 4390889 (1983-06-01), Capasso et al.
patent: 4485391 (1984-11-01), Poulain et al.
patent: 4499483 (1985-02-01), Yamazaki et al.
patent: 4544938 (1985-10-01), Scholl
Trommer, Ninth European Conf. on Optical Comm., ECOC '83, pp. 159-162, 1983.
Stillman et al., IEEE Transactions on Electron Devices, vol. ED-30, No. 4, pp. 364-381, 1983.
Webb et al., IEEE Transactions on Electron Devices, vol. ED-30, No. 4, pp. 395-400, 1983.
Olsen et al., Journal of Electronic Materials, vol. 9, No. 6, pp. 977-987, 1980.
Olsen, Lightwave, Feb., 1986, pp. 31-34.

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