Photodetecting device, radiation detecting device, and...

Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system

Reexamination Certificate

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C250S370110

Reexamination Certificate

active

06847039

ABSTRACT:
To improve the effective aperture ratio of a pixel, achieve higher sensitivity, and to realize higher definition without causing the degradation of performance of gate wiring, a signal line, and a switching TFT that are indispensable in constructing a pixel. A photodetecting device is provided, in which a plurality of pixels including photoelectric conversion elements that convert incident light into electrical signals are formed on a substrate, in which wiring connected to the pixels including the photoelectric conversion elements is arranged on an insulating layer, which has been formed so as to cover the substrate and the photoelectric conversion element, and on a space between at least two adjacent photoelectric conversion elements.

REFERENCES:
patent: 5262649 (1993-11-01), Antonuk et al.
patent: 5641974 (1997-06-01), den Boer et al.
patent: 5965872 (1999-10-01), Endo et al.
patent: 6011274 (2000-01-01), Gu et al.
patent: 0 936 660 (1999-08-01), None
patent: 964451 (1999-12-01), None
patent: WO 0010194 (2000-02-01), None
U.S. Appl. No. filed, Sep. 16, 1999, inventor Chiori Mochizuki.

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