Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2006-08-24
2008-11-18
Hoang, Quoc D (Department: 2892)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S455000, C257SE21088, C257SE21122
Reexamination Certificate
active
07452745
ABSTRACT:
A method of manufacturing a photodetecting device, by providing a first wafer that includes a photosensitive layer made of a semiconductor material and a second wafer that includes a circuit layer of electronic components, with one of the photosensitive layer or the circuit layer incorporating a field isolation layer; bonding the first and second wafers to form a structure comprising successively the circuit layer, the field isolation layer and the photosensitive layer; and forming electrically conductive vias to electrically connect the photosensitive layer to at least some of the electronic components of the circuit layer. Also, photodetecting devices prepared by these methods.
REFERENCES:
patent: 5084747 (1992-01-01), Miyawaki
patent: 5324980 (1994-06-01), Kusunoki
patent: 5808329 (1998-09-01), Jack et al.
patent: 5936261 (1999-08-01), Ma et al.
patent: 6040591 (2000-03-01), Otsuka
patent: 6204205 (2001-03-01), Yu et al.
patent: 6252218 (2001-06-01), Chou
patent: 6292529 (2001-09-01), Marcovici et al.
patent: 6309968 (2001-10-01), Chu et al.
patent: 6328796 (2001-12-01), Kub et al.
patent: 6358866 (2002-03-01), Stesmans et al.
patent: 6380568 (2002-04-01), Lee et al.
patent: 6649538 (2003-11-01), Cheng et al.
patent: 6737730 (2004-05-01), Lane et al.
patent: 6831264 (2004-12-01), Cazaux
patent: 2001/0026001 (2001-10-01), Yagi
patent: 2003/0013266 (2003-01-01), Fukuda et al.
patent: 2003/0064735 (2003-04-01), Spain et al.
patent: 2003/0129817 (2003-07-01), Visokay et al.
patent: 2004/0222500 (2004-11-01), Aspar et al.
patent: 2005/0118789 (2005-06-01), Aga et al.
patent: 2006/0051945 (2006-03-01), Yokokawa et al.
patent: 2006/0154442 (2006-07-01), De Souza et al.
patent: 198 38 442 (2000-03-01), None
patent: 0 820 104 (1998-01-01), None
patent: 0 964 570 (1999-12-01), None
patent: 2000-036445 (2000-02-01), None
patent: 2006-049725 (2006-02-01), None
Q.-Y. Tong et al., “Semiconductor Wafer Bonding: Science And Technology”, John Wiley & Sons, Inc. pp. 1-99 (1999).
Schjølberg-Henriksen, K. et al., “Oxide Charges Induced By Plasma Activation For Wafer Bonding”, Sensors and Actuators, vol. A 102, pp. 99-105 (2002).
Colinge, J. P., “Silicon-On-Insulator Technology”, Materials to VLSI, 2nd Edition, pp. 50-51 (1997).
A. Misiuk et al., “ Effect of High Temperature—Pressure on SO1 Structure”, Crystal Engineering, vol. 5, pp. 155-161 (2002).
K.-Y. Ahn et al., “Stability of Interfacial Oxide Layers During Silicon Wafer Bonding”, Journal of Appl. Phys., vol. 65, No. 2, pp. 561-563 (1989).
Oleg Kononchuk et al., “Internal Dissolution of Buried Oxide SO1 Wafers”, Solid State Phenomena, vol. 131-133, pp. 113-118 (2008).
Jim Sullivan et al., “High Temperature Oxygen Out-Diffusion from the Interfacial SiOx Bond Layer in Direct Silicon Bonded (DSB) Substrates”, IEEE 2006 International SOI Conference.
Cayrefourcq Ian
Dupont Frederic
Hoang Quoc D
S.O.I.Tec Silicon on Insulator Technologies
Winston & Strawn LLP
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