Photocoupler having element isolation layers for low cross-talk

Details Photocoupler having element isolation layers for low cross-talk Photocoupler having element isolation layers for low cross-talk

1996-11-25

1998-11-17

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

257 84, 257 85, 257 93, 257 98, H01L 2715

Patent

active

058381740

ABSTRACT:
To prevent leakage of light from a waveguide path to an isolation film in a photocoupler, isolation films are formed so that end portions thereof face a substrate, and a photodiode and phototransistor are formed on islands surrounded by these isolation films. Accordingly, a waveguide path optically coupling the photodiode and photocoupler is formed on a silicon oxide film and on the end portions of the isolation films. The isolation films are formed by alternatingly laminating silicon oxide films having a refractive index smaller than the waveguide path and silicon nitride films having a refractive index equal to or greater than the waveguide path. Accordingly, the several film thicknesses of the silicon nitride films are established to be smaller than the wavelength of light within the silicon nitride films. Because of this, leakage of light from the waveguide path to the silicon nitride films of the isolation films can be prevented.

REFERENCES:
patent: 3914137 (1975-10-01), Huffman et al.
patent: 5629534 (1997-05-01), Inuzuka et al.

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