Photocorrosion resistant semiconductor photoelectrodes

Details Photocorrosion resistant semiconductor photoelectrodes Photocorrosion resistant semiconductor photoelectrodes

1984-09-24

1986-03-04

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Electrolytic

427 74, 427 85, 429111, C25B 1104

Patent

active

045740399

ABSTRACT:
A semiconductor photoelectrode resistant to photocorrosion and a method of preparing such a photoelectrode are disclosed. The photoelectrode includes a doped oxide layer on which illumination falls for photo-stimulation. The oxide layer is doped with metallic ions, such as tantalum ions, to suppress photocorrosion. In one oxide doping method, tantalum pentachloride vapor generated by sublimation is directed against a silicon dioxide layer on a heated photoelectrode.

REFERENCES:
patent: 4492743 (1985-01-01), Howe
patent: 4501804 (1985-02-01), Bockris et al.

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