Photoconductor element and method of making the element

Details Photoconductor element and method of making the element Photoconductor element and method of making the element

1976-08-06

1978-01-10

Edlow, Martin H.

357 30, 357 16, H01L 2714, H01L 3100

Patent

active

040682536

ABSTRACT:
This invention relates to a photoconductor element comprising in the following order 1) a material having wider band gap energy than CdTe, 2) a material primarily consisting of CdTe and 3) a material primarily consisting of ZnTe doped with In. The instant material exhibits characteristics in light sensitivity over entire visible light range, and a low level of dark current and a high speed of light response. This invention further relates to a target for image pickup tube employing the element and a method of making the element.

REFERENCES:
patent: 3800194 (1974-03-01), Mariyoma
patent: 3900882 (1975-08-01), Fukai
patent: 3966512 (1976-06-01), Nonaka
patent: 4007473 (1977-02-01), Nonoka
Berger et al., Solid State Electronics, vol. 18, No. 9, Sept. 1975, p. 785 et seq.

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