Photoconductivity reduction in cadmium telluride films for light

Details Photoconductivity reduction in cadmium telluride films for light Photoconductivity reduction in cadmium telluride films for light

1994-05-02

1996-02-06

Sikes, William L.

Optical: systems and elements

Holographic system or element

Using a hologram as an optical element

359 71, 359 72, G02F 11335, G02F 1135

Patent

active

054900042

ABSTRACT:
A liquid crystal light valve device exhibiting improved performance capabilities fabricated using a cadmium telluride light blocking layer doped with nitrogen. Because of the incorporation of nitrogen into the cadmium telluride light blocking layer, the layer can be applied using high-speed, low-cost sputtering techniques without resulting in excessive photoconductivity or photoshading. The cost of the addition of nitrogen is minimal. The process of the present invention is amenable to precise control and wide flexibility which results in control of the quality aspects of the light blocking layer such as particulate density.

REFERENCES:
patent: 3824002 (1974-07-01), Beard
patent: 4019807 (1977-04-01), Boswell et al.
patent: 4799773 (1989-01-01), Sterling
Romeo et al., "Cadmium Telluride P-Type Thin Films Grown by R.F. Sputtering in an Argon-Nitrogen Atmosphere", Thin Solid Films, vol. 143, No. 2, pp. 193-199, 1986.

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