Photoconductive target

Electric lamp and discharge devices – Cathode ray tube – Image pickup tube

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313 94, H01J 2945, H01J 3138

Patent

active

043307337

ABSTRACT:
A photoconductive target having an electrode and a P-type conductive layer mainly made of Se and making rectifying contact at an interface with the electrode, with at least Te being doped in a portion of the P-type conductive layer. At least one metal fluoride forming shallow levels is doped in the region where the signal current is generated for the most part of the P-type conductive layer with an average concentration of not less than 50 ppm and not more than 5% by weight. The metal fluoride is preferably at least one selected from the group consisting of LiF, NaF, MgF.sub.2, CaF.sub.2, BaF.sub.2, AlF.sub.3, CrF.sub.3, MnF.sub.2, CoF.sub.2, PbF.sub.2, CeF.sub.3 and TlF. The high light sticking of the photoconductive target can thus be considerably reduced.

REFERENCES:
patent: 3890525 (1975-06-01), Hirai et al.
patent: 3984722 (1976-10-01), Maruyama et al.
patent: 4040985 (1977-08-01), Shidara et al.

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