Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With light activation
Patent
1997-04-03
1998-09-22
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With light activation
257431, 257459, H01L 2974
Patent
active
058118411
ABSTRACT:
A high voltage high current semiconductor switching device in which the tendency to incur premature electrical breakdown through carrier channels formed slightly below the surface of the semiconductor material is avoided. This avoidance occurs through use of a current dispersing electrically insulating element added at one extremity of the switching device structure. The added current dispersing element may be in the form of a thin oxide layer added at the anode end of the device in the case of a silicon embodiment of the invention. Tunneling conduction is believed to occur in this silicon dioxide layer and such conduction has the effect of dispersing the current through the silicon over a cross-sectional area sufficiently large to prevent the current filamentation, localized heating, thermal runaway and self destruction sequence often encountered in previous arrangements of higher energy semiconductor switches. Although several semiconductor materials are believed feasible for fabricating the device, a silicon material embodiment is primarily disclosed.
REFERENCES:
patent: 3577046 (1971-05-01), Moyson
patent: 3758797 (1973-09-01), Peterson et al.
patent: 3893153 (1975-07-01), Page et al.
patent: 3917943 (1975-11-01), Auston
patent: 4127784 (1978-11-01), Proud, Jr. et al.
patent: 4219833 (1980-08-01), Temple
patent: 4376285 (1983-03-01), Leonburger et al.
patent: 4412242 (1983-10-01), Herman et al.
patent: 4449140 (1984-05-01), Board
patent: 4673864 (1987-06-01), Dessens et al.
patent: 4899204 (1990-02-01), Rosen et al.
Peterkin, F.E. and Williams, P.F. Inhibition of surface-related electrical breakdown of long P+-1-n+ silicon structures. Appl. Phys. Lett 62(18), May 1993, pp. 2236-2238.
Ganguly Biswa N.
Hibbeln Brian A.
Hollins Gerald B.
Kundert Thomas L.
The United States of America as represented by the Secretary of
Tran Minh-Loan
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