Photoconductive switch with doping adapted to the intensity dist

Details Photoconductive switch with doping adapted to the intensity dist Photoconductive switch with doping adapted to the intensity dist

1999-03-24

2000-08-22

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257450, 257463, 257607, 257608, H01L 310312, H01L 3100

Patent

active

061076430

ABSTRACT:
A photoconductive switch, having at least a part of a first layer doped with dopants providing substantially no free charge carriers for charge transport between the electrodes at the normal operation temperature of the switch, has the nature of the doping, i.e., concentration, type (n or p). The dopants, varied from the first side to an opposite, second side of the first layer for co-operating with the intensity distribution of the light emitted by an illumination source, strikes the first side versus energy so as to obtain a substantially even creation of free charge carriers throughout the depth of the first layer from the first to the second side when illuminated by the illumination source.

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Zhu et al., Growth and Characterization of Diamond Films on Nondiamond Substrates for Electronic Applications, Proceedings of the IEEE, vol. 79, No. 5, 1991, pp. 621-646.

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