Photoconductive member with amorphous silicon-carbon surface lay

Radiation imagery chemistry: process – composition – or product th – Electric or magnetic imagery – e.g. – xerography,... – Radiation-sensitive composition or product

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430 84, 430 95, G03G 5082

Patent

active

044839111

ABSTRACT:
A photoconductive member comprises a support and an amorphous layer comprising a first layer region and a second layer region, the first layer region having photoconductivity comprising an amorphous material which comprises silicon atoms as a matrix and at least one member selected from hydrogen atoms and halogen atoms as a constituent, the first layer region having a layer region (I) containing an impurity controlling the electroconductivity type at the support side, and the second layer region comprising an amorphous material comprising at least both silicon and carbon as constituents.

REFERENCES:
patent: 3210184 (1965-10-01), Uhlig
patent: 4217374 (1980-08-01), Ovshinsky et al.
patent: 4226898 (1980-10-01), Ovshinsky et al.
patent: 4251289 (1981-02-01), Moustakas et al.
patent: 4253882 (1981-03-01), Dalal
patent: 4265991 (1981-05-01), Hirai et al.
patent: 4289822 (1981-09-01), Shimada et al.
patent: 4361638 (1982-11-01), Higashi et al.
patent: 4378417 (1983-03-01), Maruyama et al.
patent: 4394425 (1983-07-01), Shimizu et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Photoconductive member with amorphous silicon-carbon surface lay does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photoconductive member with amorphous silicon-carbon surface lay, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photoconductive member with amorphous silicon-carbon surface lay will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2189501

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.