Photoconductive member comprising (SI-GE)-SI and N

Details Photoconductive member comprising (SI-GE)-SI and N Photoconductive member comprising (SI-GE)-SI and N

1984-08-31

1986-04-29

Goodrow, John L.

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

430 84, 430 95, G03G 514

Patent

active

045857199

ABSTRACT:
A photoconductive member comprises a support for a photoconductive member and a light receiving layer overlaying the support comprising a first layer region (G) comprising an amorphous material containing silicon atoms and germanium atoms and a second layer (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms, the first layer region (G) and the second layer region (S) being provided in this order from the support side, and the distribution of germanium atoms in the said first layer (G) being not uniform in the layer thickness direction and nitrogen atoms being contained in the light receiving layer. There may be provided on the light receiving layer a layer comprising an amorphous material containing silicon atoms and at least one of carbon atoms and oxygen atoms.

REFERENCES:
patent: 4423133 (1983-12-01), Kanbe et al.
patent: 4460670 (1984-07-01), Ogawa et al.
patent: 4490450 (1984-12-01), Shimizu et al.

Affiliated with

Also associated with

Rating

Photoconductive member comprising (SI-GE)-SI and N does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photoconductive member comprising (SI-GE)-SI and N, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photoconductive member comprising (SI-GE)-SI and N will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-141497