Electric lamp and discharge devices – Cathode ray tube – Image pickup tube
Patent
1990-08-01
1993-08-03
DeMeo, Palmer C.
Electric lamp and discharge devices
Cathode ray tube
Image pickup tube
313385, 313386, 313387, H01J 3126, H01J 3148, H01J 3138
Patent
active
052332659
ABSTRACT:
A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property. In one aspect of the present invention, the amorphous semiconductor layer is amorphous Se. In another aspect of the present invention, the amorphous semiconductor layer is composed mainly of tetrahedral elements including at least an element of hydrogen or halogens. When using the amorphous semiconductor layer composed mainly of tetrahedral elements, the charge multiplication effect is produced mainly in the interior of the amorphous semiconductor, and thus it is possible to obtain a thermally stable photoconductive device having a high sensitivity while keeping a good photoresponse.
REFERENCES:
patent: 3020442 (1962-02-01), Nicholson et al.
patent: 3610987 (1971-10-01), Van Den Broer et al.
patent: 3633077 (1972-01-01), Tsuji et al.
patent: 3892966 (1975-07-01), Riedel et al.
patent: 4128844 (1978-12-01), Illenberger et al.
patent: 4329699 (1982-05-01), Ishihara et al.
patent: 4524237 (1985-06-01), Ross et al.
patent: 4636682 (1987-01-01), Kusano et al.
patent: 4888521 (1989-12-01), Tanioka et al.
patent: 4952839 (1990-08-01), Tanioka et al.
patent: 4980736 (1990-12-01), Takasaki et al.
Sze, S. M., Physics of Semiconductor Devices, pp. 56-65, "Phonon Spectra and Properties of Semiconductors", Wiley Interscience.
Grant, W. N., Solid-State Electronics, vol. 16, pp. 1189-1203, "Electron and Hole Ionization Rates in Epitaxial Silicon at High Elec. Fields", Pergamon Press.
Juska, G. et al., Physica Status Solidi (a), vol. 77, pp. 387-391, "Features of Hot Carriers in Amorphous Selenium".
Juska, G. et al, Physica Solidi (a), vol. 59, pp. 389-393, "Impact Ionization and Mobilities of Charge Carriers at High Electric Fields in Amorphous Selenium".
Umebu, I., et al, Appl. Phys. Lett., 36(4), "Ionization Coefficients Measured in Abrupt InP Junctions".
Field-Effect Transistor Versus Analog Transistor (Static Induction Transistor), IEEE Transactions . . . pp. 185-197, vol. Ed.-22, No. 4, Apr. 1975.
Aiba Masaaki
Goto Naohiro
Hirai Tadaaki
Hiruma Eikyu
Ikeda Yoshizumi
DeMeo Palmer C.
Hitachi , Ltd.
Nippon Hoso Kyokai
LandOfFree
Photoconductive imaging apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Photoconductive imaging apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photoconductive imaging apparatus will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2273584