Photoconductive device having photoconductive layer containing h

Details Photoconductive device having photoconductive layer containing h Photoconductive device having photoconductive layer containing h

1985-02-28

1986-12-30

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

2525011, 357 2, 427 74, 430 66, 430 67, 430 95, G03G 504, G03G 508, G03G 1508, B05D 512

Patent

active

046328947

ABSTRACT:
A photoconductive device comprising a conductive substrate and a photoconductive layer applied on the conductive substrate, which photoconductive layer is made of amorphous silicon containing at least hydrogen, wherein the photoconductive layer contains hydroxy radicals.
Another photoconductive device comprising a conductive substrate, a photoconductive layer of amorphous silicon containing at least hydrogen and a surface protection layer applied on the photoconductive layer; wherein a dopant is added in the photoconductive layer at least near the interface with the surface protection layer, and the concentration of the dopant increases in the direction perpendicular to the interface and the surface protection layer has an optical energy gap larger than that of the photoconductive layer.
A further photoconductive device comprising a conductive substrate; a photoconductive layer of amorphous silicon applied on the conductive substrate and a surface protection layer of amorphous silicon applied on said photoconductive layer wherein the surface protection layer contains oxygen, and is doped with a IIIb element.

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patent: 4486521 (1984-12-01), Misumi et al.
patent: 4490454 (1984-12-01), Misumi et al.
patent: 4563460 (1985-08-01), Kanbe et al.

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